********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
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*Jul 21, 2014
*ECN S14-1440, Rev. A
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT SiS488DN D G S 
M1 3 GX S S NMOS W= 4740000u L= 0.3u 
M2 S GX S D PMOS W= 4740000u L= 0.1u
R1 D 3 3.3317e-03 4.179e-03 1.311e-05 
CGS GX S 5.632e-10 
CGD GX D 1.000e-13 
RG G GY 0.9 
RTCV 100 S 1e6 2.348e-04 -6.475e-07 
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 4740000u 
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8 
+ RS = 0 KP = 8.248e-06 NSUB = 7.080e+16 
+ KAPPA = 2.497e-03 NFS = 1.020e+11
+ LD = 0 IS = 0 TPG = 1 CAPOP = 12 ) 
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 5e-8 
+NSUB = 5.101e+16 IS = 0 TPG = -1 CAPOP = 12 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 9.366e-08 TREF = 25 BV = 41 
+RS = 8.090e-03 N = 1.172e+00 IS = 1.606e-11 
+EG = 8.527e-01 XTI = 9.983e+00 TRS = 1.000e-05 
+CJO = 4.321e-10 VJ = 4.365e+00 M = 3.123e-01 ) 
.ENDS 
